APA   Click to copy
Giri, P., Dhar, S., Kulkarni, V. N., & Mohapatra, Y. N. (1997). Characterization of deep level defects in Si irradiated with MeV Ar+ ions using constant capacitance time analyzed transient spectroscopy.

Chicago/Turabian   Click to copy
Giri, P., S. Dhar, V. N. Kulkarni, and Y. N. Mohapatra. “Characterization of Deep Level Defects in Si Irradiated with MeV Ar+ Ions Using Constant Capacitance Time Analyzed Transient Spectroscopy” (1997).

MLA   Click to copy
Giri, P., et al. Characterization of Deep Level Defects in Si Irradiated with MeV Ar+ Ions Using Constant Capacitance Time Analyzed Transient Spectroscopy. 1997.

@article{p1997a,
  title = {Characterization of deep level defects in Si irradiated with MeV Ar+ ions using constant capacitance time analyzed transient spectroscopy},
  year = {1997},
  author = {Giri, P. and Dhar, S. and Kulkarni, V. N. and Mohapatra, Y. N.}
}