Yashowanta N Mohapatra

Professor Emeritus


Curriculum vitae



+91 512 259 7033


Physics

IIT Kanpur

Department of Physics
IIT Kanpur
Kanpur - 208016
India



Electrically active defects in as-implanted, deep buried layers in p-type silicon


Journal article


P. Giri, S. Dhar, V. N. Kulkarni, Y. N. Mohapatra
1997

Semantic Scholar DOI
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Cite

APA   Click to copy
Giri, P., Dhar, S., Kulkarni, V. N., & Mohapatra, Y. N. (1997). Electrically active defects in as-implanted, deep buried layers in p-type silicon.


Chicago/Turabian   Click to copy
Giri, P., S. Dhar, V. N. Kulkarni, and Y. N. Mohapatra. “Electrically Active Defects in as-Implanted, Deep Buried Layers in p-Type Silicon” (1997).


MLA   Click to copy
Giri, P., et al. Electrically Active Defects in as-Implanted, Deep Buried Layers in p-Type Silicon. 1997.


BibTeX   Click to copy

@article{p1997a,
  title = {Electrically active defects in as-implanted, deep buried layers in p-type silicon},
  year = {1997},
  author = {Giri, P. and Dhar, S. and Kulkarni, V. N. and Mohapatra, Y. N.}
}


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