CHARGE REDISTRIBUTION AND DEFECT RELAXATION IN HEAVILY DAMAGED SILICON STUDIED USING TIME ANALYZED TRANSIENT SPECTROSCOPY

Journal article

Y. N. Mohapatra, P. Giri
1998

Semantic Scholar DOI

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APA Click to copy
Mohapatra, Y. N., & Giri, P. (1998). CHARGE REDISTRIBUTION AND DEFECT RELAXATION IN HEAVILY DAMAGED SILICON STUDIED USING TIME ANALYZED TRANSIENT SPECTROSCOPY.

Chicago/Turabian Click to copy
Mohapatra, Y. N., and P. Giri. “CHARGE REDISTRIBUTION AND DEFECT RELAXATION IN HEAVILY DAMAGED SILICON STUDIED USING TIME ANALYZED TRANSIENT SPECTROSCOPY” (1998).

MLA Click to copy
Mohapatra, Y. N., and P. Giri. CHARGE REDISTRIBUTION AND DEFECT RELAXATION IN HEAVILY DAMAGED SILICON STUDIED USING TIME ANALYZED TRANSIENT SPECTROSCOPY. 1998.

BibTeX Click to copy

@article{y1998a,
  title = {CHARGE REDISTRIBUTION AND DEFECT RELAXATION IN HEAVILY DAMAGED SILICON STUDIED USING TIME ANALYZED TRANSIENT SPECTROSCOPY},
  year = {1998},
  author = {Mohapatra, Y. N. and Giri, P.}
}