Yashowanta N Mohapatra

Professor Emeritus


Curriculum vitae



+91 512 259 7033


Physics

IIT Kanpur

Department of Physics
IIT Kanpur
Kanpur - 208016
India



CHARGE REDISTRIBUTION AMONG DEFECTS IN HEAVILY DAMAGED SILICON


Journal article


P. Giri, S. Dhar, V. N. Kulkarni, Y. N. Mohapatra
1998

Semantic Scholar DOI
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APA   Click to copy
Giri, P., Dhar, S., Kulkarni, V. N., & Mohapatra, Y. N. (1998). CHARGE REDISTRIBUTION AMONG DEFECTS IN HEAVILY DAMAGED SILICON.


Chicago/Turabian   Click to copy
Giri, P., S. Dhar, V. N. Kulkarni, and Y. N. Mohapatra. “CHARGE REDISTRIBUTION AMONG DEFECTS IN HEAVILY DAMAGED SILICON” (1998).


MLA   Click to copy
Giri, P., et al. CHARGE REDISTRIBUTION AMONG DEFECTS IN HEAVILY DAMAGED SILICON. 1998.


BibTeX   Click to copy

@article{p1998a,
  title = {CHARGE REDISTRIBUTION AMONG DEFECTS IN HEAVILY DAMAGED SILICON},
  year = {1998},
  author = {Giri, P. and Dhar, S. and Kulkarni, V. N. and Mohapatra, Y. N.}
}


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