Yashowanta N Mohapatra

Professor Emeritus


Curriculum vitae



+91 512 259 7033


Physics

IIT Kanpur

Department of Physics
IIT Kanpur
Kanpur - 208016
India



Unusual features in trap emission characteristics of heavily damaged silicon induced by MeV ion implantation


Journal article


P. Giri, Y. N. Mohapatra
2000

Semantic Scholar DOI
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Cite

APA   Click to copy
Giri, P., & Mohapatra, Y. N. (2000). Unusual features in trap emission characteristics of heavily damaged silicon induced by MeV ion implantation.


Chicago/Turabian   Click to copy
Giri, P., and Y. N. Mohapatra. “Unusual Features in Trap Emission Characteristics of Heavily Damaged Silicon Induced by MeV Ion Implantation” (2000).


MLA   Click to copy
Giri, P., and Y. N. Mohapatra. Unusual Features in Trap Emission Characteristics of Heavily Damaged Silicon Induced by MeV Ion Implantation. 2000.


BibTeX   Click to copy

@article{p2000a,
  title = {Unusual features in trap emission characteristics of heavily damaged silicon induced by MeV ion implantation},
  year = {2000},
  author = {Giri, P. and Mohapatra, Y. N.}
}


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